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71V416L15PHGI Datasheet(PDF) 7 Page - Integrated Device Technology |
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71V416L15PHGI Datasheet(HTML) 7 Page - Integrated Device Technology |
7 / 9 page 6.42 IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges 7 Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,3) NOTES: 1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE. 2. During this period, I/O pins are in the output state, and input signals must not be applied. 3. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state. Timing Waveform of Write Cycle No. 3 (BHE, BLE Controlled Timing)(1,3) ADDRESS CS DATAIN 3624 drw 09 DATAIN VALID tWC tAS (2) tCW tWR WE tAW DATAOUT tDW tDH BHE, BLE tBW tWP ADDRESS CS DATAIN 3624 drw 10 DATAIN VALID tWC tAS (2) tCW tWR WE tAW DATAOUT tDW tDH BHE, BLE tBW tWP |
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