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NSS30100LT1G Datasheet(PDF) 3 Page - ON Semiconductor

Part # NSS30100LT1G
Description  PNP Transistor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NSS30100LT1G Datasheet(HTML) 3 Page - ON Semiconductor

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NSS30100LT1G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain versus
Collector Current
Figure 2. DC Current Gain versus
Collector Current
Figure 3. “On” Voltages
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
Figure 5. Collector Emitter Saturation Voltage
versus Base Current
Figure 6. Collector Emitter Saturation Voltage
versus Collector Current
10
0.001
IC, COLLECTOR CURRENT (AMPS)
200
150
100
50
IC, COLLECTOR CURRENT (mA)
100
1000
1.0
130
90
70
50
100
1000
1.0
IC, COLLECTOR CURRENT (mA)
1.0
0.4
0.3
0.2
0.1
0
IC, COLLECTOR CURRENT (AMPS)
0.01
0.001
1.0
0.95
0.6
0.55
0.5
1.0
0.01
IB, BASE CURRENT (mA)
1.0
0.6
0.4
0.2
0
IC, COLLECTOR CURRENT (AMPS)
0.001
1.8
1.0
0.8
0.6
0.2
0
0.1
0.1
0
0.01
0.1
1.0
10
110
150
170
10
0.1
1.0
10
10
1000
100
0.8
0.01
10
1.0
0.4
VCE = -2.0 V
190
210
230
VCE = -1.0 V
125
°C
25
°C
-55
°C
0.8
0.7
0.6
0.5
0.9
VBE(sat)
VCE(sat)
VBE(on)
0.7
0.65
0.8
0.75
0.9
0.85
IC/IB = 100
IC/IB = 10
1.6
1.4
1.2
IC/IB = 100
IC/IB = 10
1000 mA
100 mA
50 mA
10 mA


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