MMBT5550LT1G datasheet(3/6 Pages) ONSEMI

Part #	MMBT5550LT1G

Description	High Voltage Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT5550L, MMBT5551L

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3

TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

500

TJ = 125°C

-55

°C

25

°C

5.0

10

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

30

20

300

100

50

7.0

VCE = 1.0 V

VCE = 5.0 V

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

1.0

IC = 1.0 mA

0

0.3

0.005

0.01

0.2

0.5

1.0

2.0

20

50

0.8

0.5

0.4

0.9

0.7

0.6

0.2

0.02

0.05

0.1

10

0.1

10 mA

30 mA

100 mA

5.0

Figure 3. Collector Cut−Off Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

101

10-5

0.4

0.3

0.1

100

10-1

10-2

10-3

10-4

0.2

0

0.1

0.2

0.4

0.3

0.6

0.5

VCE = 30 V

TJ = 125°C

75

°C

25

°C

IC = ICES

REVERSE

FORWARD

IC, COLLECTOR CURRENT (A)

0.30

0.001

0.01

0.1

150

°C

IC/IB = 10

0.0001

Figure 4. VCE(sat)

0.25

0.20

0.10

0.05

0

0.15

25

°C

-55

°C

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