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NSVMMBT5401LT3G Datasheet(PDF) 2 Page - ON Semiconductor |
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NSVMMBT5401LT3G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page MMBT5401L, SMMBT5401L, NSVMMBT5401L www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −150 − Vdc Collector − Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO −160 − Vdc Emitter − Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Collector−Base Cutoff Current (VCB = −120 Vdc, IE = 0) (VCB = −120 Vdc, IE = 0, TA = 100°C) ICBO − − −50 −50 nAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = −1.0 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −50 mAdc, VCE = −5.0 Vdc) hFE 50 60 50 − 240 − − Collector − Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) − − −0.2 −0.5 Vdc Base − Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) − − −1.0 −1.0 Vdc SMALL− SIGNAL CHARACTERISTICS Current − Gain — Bandwidth Product (IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz) fT 100 300 MHz Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 6.0 pF Small Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe 40 200 − Noise Figure (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz) NF − 8.0 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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