NSVMMBT5401LT3G datasheet(2/6 Pages) ONSEMI

Part #	NSVMMBT5401LT3G

Description	High Voltage Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT5401L, SMMBT5401L, NSVMMBT5401L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = −1.0 mAdc, IB = 0)

V(BR)CEO

−150

−

Vdc

Collector − Base Breakdown Voltage

(IC = −100 mAdc, IE = 0)

V(BR)CBO

−160

−

Vdc

Emitter − Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Collector−Base Cutoff Current

(VCB = −120 Vdc, IE = 0)

(VCB = −120 Vdc, IE = 0, TA = 100°C)

ICBO

−

−50

nAdc

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −1.0 mAdc, VCE = −5.0 Vdc)

(IC = −10 mAdc, VCE = −5.0 Vdc)

(IC = −50 mAdc, VCE = −5.0 Vdc)

hFE

50

60

50

−

240

−

Collector − Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

VCE(sat)

−

−0.2

−0.5

Vdc

Base − Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

VBE(sat)

−

−1.0

Vdc

SMALL− SIGNAL CHARACTERISTICS

Current − Gain — Bandwidth Product

(IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz)

fT

100

300

MHz

Output Capacitance

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

6.0

pF

Small Signal Current Gain

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hfe

40

200

−

Noise Figure

(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz)

NF

−

8.0

dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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