© Semiconductor Components Industries, LLC, 1994

October, 2016 − Rev. 13

1

Publication Order Number:

MMBTA42LT1/D

MMBTA42L, SMMBTA42L,

MMBTA43L

High Voltage Transistors

NPN Silicon

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Characteristic

Symbol

Value

Unit

Collector−Emitter Voltage

MMBTA42, SMMBTA42

MMBTA43

300

200

Vdc

Collector−Base Voltage

MMBTA42, SMMBTA42

MMBTA43

300

200

Vdc

Emitter−Base Voltage

MMBTA42, SMMBTA42

MMBTA43

6.0

6.0

Vdc

Collector Current − Continuous

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

Derate above 25°C

225

1.8

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25°C

300

2.4

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

SOT−23 (TO−236)

CASE 318

STYLE 6

2

3

1

www.onsemi.com

COLLECTOR

3

1

BASE

2

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1

1D M G

G

1D

= MMBTA42LT, SMMBTA42L

M1E = MMBTA43LT

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAMS

1

M1E M G

G