© Semiconductor Components Industries, LLC, 1994

October, 2016 − Rev. 12

1

Publication Order Number:

MMBT3906LT1/D

MMBT3906L, SMMBT3906L

General Purpose Transistor

PNP Silicon

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

−40

Vdc

Collector − Base Voltage

−40

Vdc

Emitter − Base Voltage

−5.0

Vdc

Collector Current − Continuous

−200

mAdc

Collector Current − Peak (Note 3)

−800

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

3. Reference SOA curve.

Device

Package

ORDERING INFORMATION

MMBT3906LT1G

SOT−23

(Pb−Free)

3,000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBT3906LT3G

SOT−23

(Pb−Free)

10,000 / Tape &

Reel

COLLECTOR

3

1

BASE

2

EMITTER

SOT−23 (TO−236)

CASE 318

STYLE 6

1

2

3

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1

2A M

G

G

2A = Specific Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

SMMBT3906LT1G

SOT−23

(Pb−Free)

3,000 / Tape &

Reel

SMMBT3906LT3G

SOT−23

(Pb−Free)

10,000 / Tape &

Reel

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