SMMBT3906LT1G datasheet(2/7 Pages) ONSEMI

Part #	SMMBT3906LT1G

Description	General Purpose Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT3906L, SMMBT3906L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = −1.0 mAdc, IB = 0)

V(BR)CEO

−40

−

Vdc

Collector − Base Breakdown Voltage

(IC = −10 mAdc, IE = 0)

V(BR)CBO

−40

−

Vdc

Emitter − Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Base Cutoff Current

(VCE = −30 Vdc, VEB = −3.0 Vdc)

IBL

−

−50

nAdc

Collector Cutoff Current

(VCE = −30 Vdc, VEB = −3.0 Vdc)

ICEX

−

−50

nAdc

ON CHARACTERISTICS (Note 4)

DC Current Gain

(IC = −0.1 mAdc, VCE = −1.0 Vdc)

(IC = −1.0 mAdc, VCE = −1.0 Vdc)

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −50 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

HFE

60

80

100

60

30

−

300

−

Collector − Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

VCE(sat)

−

−0.25

−0.4

Vdc

Base − Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

VBE(sat)

−0.65

−

−0.85

−0.95

Vdc

SMALL− SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)

fT

250

−

MHz

Output Capacitance

(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

4.5

pF

Input Capacitance

(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

10

pF

Input Impedance

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hie

2.0

12

k

W

Voltage Feedback Ratio

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hre

0.1

10

X 10−4

Small − Signal Current Gain

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hfe

100

400

−

Output Admittance

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hoe

3.0

60

mmhos

Noise Figure

(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

NF

−

4.0

dB

SWITCHING CHARACTERISTICS

Delay Time

(VCC = −3.0 Vdc, VBE = 0.5 Vdc,

IC = −10 mAdc, IB1 = −1.0 mAdc)

td

−

35

ns

Rise Time

tr

−

35

Storage Time

(VCC = −3.0 Vdc, IC = −10 mAdc,

IB1 = IB2 = −1.0 mAdc)

ts

−

225

ns

Fall Time

tf

−

75

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

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