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BLT92 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BLT92 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 10 page May 1989 7 Philips Semiconductors Product specification UHF power transistor BLT92/SL Fig.6 Load power as a function of source power. f = 900 MHz; Tmb =25 °C; class-B operation; typical values. VCE = 7.5 V − − − VCE = 5.0 V handbook, halfpage 0 0.4 PS (W) PL (W) 0.8 1.2 5 0 4 3 2 1 MDA301 Fig.7 Power gain and efficiency as a function of load power. f = 900 MHz; Tmb =25 °C; class-B operation; typical values. VCE = 7.5 V − − − VCE = 5.0 V handbook, halfpage 05 10 0 2 4 6 8 12 3 Gp (dB) Gp Gp 4 MDA302 PL (W) 20 40 60 80 100 0 ηC (%) ηC ηC RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 9.0 V at Tmb =25 °C. |
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