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BT138X-500E Datasheet(PDF) 2 Page - NXP Semiconductors |
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BT138X-500E Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Triacs BT138X series E sensitive gate ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree C isol Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance full or half cycle junction to heatsink with heatsink compound - - 4.0 K/W without heatsink compound - - 5.5 K/W R th j-a Thermal resistance in free air - 55 - K/W junction to ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A T2+ G+ - 2.5 10 mA T2+ G- - 4.0 10 mA T2- G- - 5.0 10 mA T2- G+ - 11 25 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - 3.2 30 mA T2+ G- - 16 40 mA T2- G- - 4.0 30 mA T2- G+ - 5.5 40 mA I H Holding current V D = 12 V; IGT = 0.1 A - 4.0 30 mA V T On-state voltage I T = 15 A - 1.4 1.65 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V V D = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V I D Off-state leakage current V D = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D/dt Critical rate of rise of V DM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/ µs off-state voltage exponential waveform; gate open circuit t gt Gate controlled turn-on I TM = 16 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs time dI G/dt = 5 A/µs September 1997 2 Rev 1.200 |
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