2015-11-24

2

Version 1.2

SFH 4716A

Parameter

Symbol

Values

Unit

Operation and storage temperature range

T

-40 ... 125

°C

Junction temperature

T

j

145

°C

Reverse voltage

V

R

5

V

Forward current

I

F

1500

mA

Surge current

I

FSM

2

A

Power consumption

3.5

W

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

2

kV

Thermal resistance junction - solder point

10

K / W

Note:

For the forward current and power consumption please see "maximum permissible forward current"

diagram

Parameter

Symbol

Values

Unit

Peak wavelength

(I

(typ)

λ

peak

860

nm

Centroid wavelength

(typ)

λ

centroid

850

nm

(typ)

∆λ

30

nm

Half angle

(typ)

ϕ

± 75

°

Dimensions of active chip area

(typ)

L x W

1 x 1

mm x

mm

Rise and fall times of I

(I

(typ)

t

11/ 14

ns

Forward voltage

(typ (max)) V

F

1.65 (≤ 2.1)

V

Forward voltage

1.75 (≤ 2.3)

V

Forward voltage

(I

1.9 (≤ 2.5)

V

Total radiant flux

(I

(typ)

Φ

e

1090

mW

Total radiant flux

(typ)

Φ

e

740

mW