NJVMJD340T4G datasheet(2/6 Pages) ONSEMI

Part #	NJVMJD340T4G

Description	High Voltage Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD340 (NPN), MJD350 (PNP)

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

8.33

°C/W

Thermal Resistance, Junction−to−Ambient (Note 2)

RqJA

80

°C/W

Leading Temperature for Soldering Purpose

TL

260

°C

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 1 mA, IB = 0)

VCEO(sus)

300

−

V

Collector Cutoff Current

(VCB = 300 V, IE = 0)

ICEO

−

0.1

mA

Emitter Cutoff Current

(VBE = 3 V, IC = 0)

IEBO

−

0.1

mA

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 50 mA, VCE = 10 V)

hFE

30

240

−

Collector−Emitter Saturation Voltage

(IC = 100 mA, IB = 10 mA)

VCE(sat)

−

1

V

Base−Emitter On Voltage

(IC = 1 A, VCE = 10 V)

VBE(on)

−

1.5

V

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

(IC = 50 mA, VCE = 10 V, f = 10 MHz)

fT

10

−

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

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