NSVMMBT5551M3T5G datasheet(2/5 Pages) ONSEMI

Part #	NSVMMBT5551M3T5G

Description	NPN High Voltage Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT5551M3

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

160

−

Vdc

Collector − Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

180

−

Vdc

Emitter − Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

6.0

−

Vdc

Collector Cutoff Current

(VCB = 120 Vdc, IE = 0)

(VCB = 120 Vdc, IE = 0, TA = 100°C)

ICBO

−

100

nAdc

mAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

−

50

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc)

(IC = 50 mAdc, VCE = 5.0 Vdc)

hFE

80

30

−

250

−

Collector − Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

−

0.15

0.20

Vdc

Base − Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat)

−

1.0

Vdc

Collector Emitter Cut−off

(VCB = 10 V)

(VCB = 75 V)

ICES

−

50

100

nA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width = 300

ms, Duty Cycle = 2.0%.

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