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ISL71090SEHF50 Datasheet(PDF) 10 Page - Intersil Corporation |
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ISL71090SEHF50 Datasheet(HTML) 10 Page - Intersil Corporation |
10 / 13 page ISL71090SEH50 10 FN8588.3 March 15, 2016 Submit Document Feedback Package Characteristics Weight of Packaged Device 0. 31 Grams (typical) Lid Characteristics Finish: Gold Potential: Connected to lead #4 (GND) Case Isolation to Any Lead: 20 x 109 Ω (minimum) Die Characteristics Die Dimensions 1464µm x 1744µm (58 mils x 69 mils) Thickness: 483µm ±25µm (19 mils ±1 mil) Interface Materials GLASSIVATION Type: Nitrox Thickness: 15kÅ TOP METALLIZATION Type: AlCu (99.5%/0.5%) Thickness: 30kÅ BACKSIDE FINISH Silicon ASSEMBLY RELATED INFORMATION SUBSTRATE POTENTIAL Floating ADDITIONAL INFORMATION WORST CASE CURRENT DENSITY <2 x 105 A/cm2 PROCESS Dielectrically Isolated Advanced Bipolar Technology- PR40 SOI Metallization Mask Layout GND GND POWR QUIET COMP VS DNC DNC DNC VOUT SENSE VOUT FORCE TRIM (see Note 12, Table 4) |
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