ISL71090SEH12 datasheet(5/13 Pages) INTERSIL

Part #	ISL71090SEH12

Description	7.5V Radiation Hardened Ultra Low Noise, Precision Voltage Reference

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Manufacturer	INTERSIL [Intersil Corporation]

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ISL71090SEH75

5

FN8591.3

March 18, 2016

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Absolute Maximum Ratings

Thermal Information

Maximum Voltage

VIN to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +40V

VIN to GND at an LET = 86MeV•cm2/mg . . . . . . . . . . . . . . -0.5V to +36V

VOUT to GND (10s). . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to VOUT + 0.5V

Voltage on any Pin to Ground . . . . . . . . . . . . . . . . . -0.5V to +VOUT + 0.5V

Voltage on DNC Pins . . . . . . . . . . . . No connections permitted to these pins

ESD Ratings

Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV

Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 200V

Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . 750V

Thermal Resistance (Typical)

JA (°C/W) JC (°C/W)

8 Ld Flatpack Package (Notes 3, 4). . . . . .

140

15

Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C

Maximum Junction Temperature (TJMAX). . . . . . . . . . . . . . . . . . . . . .+150°C

Recommended Operating Conditions

VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.2V to +30V

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product

reliability and result in failures not covered by warranty.

NOTES:

3.

JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

4. For

JC, the "case temp" location is the center of the ceramic on the package underside.

5. Product capability established by initial characterization. The "EH" version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.

6. The output capacitance used for SEE testing is CIN = 0.1µF and COUT = 1µF.

Electrical Specifications for Flatpack V

IN = 15V, IOUT = 0mA, CL = 0.1µF and CC = 1nF unless otherwise specified. Boldface

limits apply after radiation at +25°C and across the operating temperature range, -55°C to +125°C without radiation, unless otherwise specified.

PARAMETER

DESCRIPTION

TEST CONDITIONS

MIN

(Note 7)TYP

MAX

(Note 7)UNIT

VOUT

Output Voltage

7.5

V

VOA

VOUT Accuracy at TA = +25°C

VOUT = 7.5V, (Note 9)

-0.05

+0.05

%

VOUT Accuracy at TA = -55°C to +125°C VOUT = 7.5V, (Note 9)

-0.15

+0.15

%

VOUT Accuracy at TA = +25°C, Post

Radiation

VOUT = 7.5V, (Note 9)

-0.3

+0.3

%

TC VOUT

Output Voltage Temperature

Coefficient (Note 8)

10

ppm/°C

VIN

Input Voltage Range

9.2

30

V

IIN

Supply Current

0.930

1.500

mA

VOUT /VIN

Line Regulation

VIN = 9.2V to 30V

8

20

ppm/V

VOUT/IOUT

Load Regulation

Sourcing: 0mA ≤ IOUT ≤ 20mA

10

20

ppm/mA

Sinking: -10mA ≤ IOUT ≤ 0mA

21

40

ppm/mA

VD

Dropout Voltage (Note 10)1.5

1.7

V

ISC+

Short-Circuit Current

TA = +25°C, VOUT tied to GND

53

mA

ISC-

Short-Circuit Current

TA = +25°C, VOUT tied to VIN

-63

mA

tR

Turn-On Settling Time

90% of final value, CL = 1.0µF,

CC = open

250

µs

PSRR

Ripple Rejection

f = 120Hz

90

dB

eN

Output Voltage Noise

0.1Hz ≤ f ≤

10Hz

1.0

µVP-P

VN

Broadband Voltage Noise

10Hz ≤ f ≤

1kHz

1.2

µVRMS

Noise Density

f = 1kHz, VIN = 9.5V

38

nV/

Hz

VOUT/t

Long Term Drift

TA = +125°C, 1000hrs

15

ppm

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