BUK100-50GS datasheet(7/11 Pages) PHILIPS

Part #	BUK100-50GS

Description	PowerMOS transistor TOPFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

PowerMOS transistor

BUK100-50GS

TOPFET

Fig.14. Typical overload protection characteristics.

Conditions: V

DD = 13 V; VIS = 10 V; SC load = 30 mΩ

Fig.15. Typical clamping characteristics, 25 ˚C.

I

D = f(VDS); conditions: VIS = 0 V; tp ≤ 50 µs

Fig.16. Input threshold voltage.

V

IS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V

Fig.17. Typical DC input characteristics, T

j = 25 ˚C.

I

IS = f(VIS); normal operation

Fig.18. Typical DC input characteristics, T

j = 25 ˚C.

I

ISL = f(VIS); overload protection operated ⇒ ID = 0 A

Fig.19. Typical reverse diode current, T

j = 25 ˚C.

I

S = f(VSDS); conditions: VIS = 0 V; tp = 250 µs

-60

-20

20

60

100

140

180

220

Tmb / C

Energy & Time

BUK100-50GS

1

0.5

0

Energy / J

Time / ms

Tj(TO)

0

2

4

6

8

10

12

14

BUK100-50GS

VIS / V

II / mA

1.0

0.5

0

50

60

70

BUK100-50GS

VDS / V

ID / A

20

15

10

5

0

typ.

0

2

4

6

8

10

12

14

VIS / V

IIS / mA

BUK100-50GS

5

4

3

2

1

0

PROTECTION LATCHED

NORMAL

RESET

-60

-40

-20

0

20

40

60

80

100

120

140

Tj / C

VIS(TO) / V

2

1

0

max.

typ.

min.

0

0.2

0.4

0.6

0.8

1

1.2

1.4

BUK100-50GS

VSD / V

IS / A

60

50

40

30

20

10

0

November 1996

7

Rev 1.300

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BUK100-50GS Datasheet(PDF) 7 Page - NXP Semiconductors

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