Philips Semiconductors

Product specification

PowerMOS transistor

BUK201-50X

TOPFET high side switch

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Battery voltages

V

BG

Continuous off-state supply voltage

-

0

50

V

Reverse battery voltages

1

External resistors:

-V

BG

Repetitive peak supply voltage

R

-

32

V

δ ≤ 0.1

-V

BG

Continuous reverse supply voltage

R

-16

V

I

L

Continuous load current

T

-

15

A

P

D

Total power dissipation

T

-

83.3

W

T

stg

Storage temperature

-

-55

175

˚C

T

j

Continuous junction temperature

2

-

-

150

˚C

T

sold

Lead temperature

during soldering

-

250

˚C

Input and status

I

I

Continuous input current

-

-5

5

mA

I

S

Continuous status current

-

-5

5

mA

I

I

Repetitive peak input current

δ ≤ 0.1

-20

20

mA

I

S

Repetitive peak status current

δ ≤ 0.1

-20

20

mA

Inductive load clamping

E

BL

Non-repetitive clamping energy

T

-

1.2

J

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

C

Electrostatic discharge capacitor

Human body model;

-

2

kV

voltage

C = 250 pF; R = 1.5 k

Ω

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Thermal resistance

3

R

th j-mb

Junction to mounting base

-

-

1.2

1.5

K/W

R

th j-a

Junction to ambient

in free air

-

60

75

K/W

1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.

2 For normal continuous operation. A higher T

to protect the switch.

3 Of the output Power MOS transistor.

July 1996

2

Rev 1.000