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BUK472-60A Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK472-60A Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification PowerMOS transistor BUK472-60A/B Fig.5. Typical output characteristics, T j = 25 ˚C. I D = f(VDS); parameter VGS Fig.6. Typical on-state resistance, T j = 25 ˚C. R DS(ON) = f(ID); parameter VGS Fig.7. Typical transfer characteristics. I D = f(VGS) ; conditions: VDS = 25 V; parameter Tj Fig.8. Typical transconductance, T j = 25 ˚C. g fs = f(ID); conditions: VDS = 25 V Fig.9. Normalised drain-source on-state resistance. a = R DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 8.5 A; VGS = 10 V Fig.10. Gate threshold voltage. V GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 0 2 4 6 8 10 BUK452-50A VDS / V ID / A 30 20 10 0 4 5 6 7 8 10 15 20 VGS / V = 0 4 8 12 16 20 24 28 BUK452-50A ID / A gfs / S 5 4 3 2 1 0 0 4 8 12 16 20 24 28 BUK452-50A ID / A RDS(ON) / Ohm 0.5 0.4 0.3 0.2 0.1 0 5 6 7 8 10 20 VGS / V = -60 -40 -20 0 20 40 60 80 100 120 140 Tj / C a Normalised RDS(ON) = f(Tj) 1.5 1.0 0.5 0 0 2 4 6 8 10 12 14 16 18 20 BUK452-50A VGS / V ID / A 30 20 10 0 Tj / C = 25 150 -60 -40 -20 0 20 40 60 80 100 120 140 Tj / C VGS(TO) / V 4 3 2 1 0 max. typ. min. November 1996 4 Rev 1.200 |
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