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EMT1DXV6 Datasheet(PDF) 1 Page - ON Semiconductor |
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EMT1DXV6 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 2 1 Publication Order Number: EMT1DXV6T1/D EMT1DXV6 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. Features • Lead−Free Solder Plating • Low VCE(SAT), t0.5 V • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −60 V Collector − Base Voltage VCBO −50 V Emitter − Base Voltage VEBO −6.0 V Collector Current − Continuous IC −100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25 °C PD 357 (Note 1) 2.9 (Note 1) mW mW/ °C Thermal Resistance, Junction-to-Ambient RqJA 350 (Note 1) °C/W Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25 °C PD 500 (Note 1) 4.0 (Note 1) mW mW/ °C Thermal Resistance, Junction-to-Ambient RqJA 250 (Note 1) °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. SOT−563 CASE 463A STYLE 1 Q1 (1) (2) (3) (4) (5) (6) Q2 http://onsemi.com MARKING DIAGRAM 3T M G G 3T = Specific Device Code M = Month Code G = Pb−Free Package 1 (Note: Microdot may be in either location) 1 6 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION |
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Similar Description - EMT1DXV6_14 |
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