© Semiconductor Components Industries, LLC, 2014

November, 2014 − Rev. 2

1

Publication Order Number:

EMT1DXV6T1/D

EMT1DXV6

Dual General Purpose

Transistor

PNP Dual

This transistor is designed for general purpose amplifier

applications. It is housed in the SOT−563 which is designed for low

power surface mount applications.

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

−60

V

Collector − Base Voltage

−50

V

Emitter − Base Voltage

−6.0

V

Collector Current − Continuous

−100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

Derate above 25

°C

357

(Note 1)

2.9

(Note 1)

mW

mW/

°C

Thermal Resistance,

Junction-to-Ambient

350

(Note 1)

°C/W

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

Derate above 25

°C

500

(Note 1)

4.0

(Note 1)

mW

mW/

°C

Thermal Resistance,

Junction-to-Ambient

250

(Note 1)

°C/W

Junction and Storage

Temperature Range

− 55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−4 @ Minimum Pad.

SOT−563

CASE 463A

STYLE 1

(1)

(2)

(3)

(4)

(5)

(6)

http://onsemi.com

MARKING DIAGRAM

3T M

G

G

3T = Specific Device Code

M

= Month Code

G

= Pb−Free Package

1

(Note: Microdot may be in either location)

1

6

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION