EMT1DXV6 datasheet(3/4 Pages) ONSEMI

Part #	EMT1DXV6

Description	Dual General Purpose Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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EMT1DXV6

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TYPICAL CHARACTERISTICS

Figure 1. IC − VCE

VCE, COLLECTOR VOLTAGE (V)

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. On Voltage

IC, COLLECTOR CURRENT (mA)

0

120

90

60

30

0

36

9

15

1000

0.1

100

10

1

10

100

TA = 25°C

TA = - 25°C

TA = 75°C

VCE = 10 V

2

0.01

1.5

1

0.5

0

0.1

1

10

100

TA = 25°C

900

0.2

800

700

600

500

400

300

200

100

0.5

1

5

10

20

40

60

80

100

150 200

TA = 25°C

VCE = 5 V

12

0

TA = 25°C

300

mA

IB = 50 mA

100

150

200

250

Figure 5. Capacitance

VCB (V)

Figure 6. Capacitance

VEB (V)

13

0

12

11

10

9

6

12

3

4

14

0

12

10

8

6

4

0

10

20

30

40

8

7

2

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