MJE18008, MJF18008

www.onsemi.com

5

3

160

Figure 13. Inductive Fall Time

Figure 14. Inductive Crossover Time

60

515

400

200

50

4

6789

10

11

12

13

14

70

80

140

35

15

4

6789

10

11

12

13

14

300

100

100

120

350

150

130

110

90

150

250

TYPICAL SWITCHING CHARACTERISTICS

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Switching Safe

Operating Area

Figure 17. Forward Bias Power Derating

100

10

9

6

0

0

200

1,0

0,8

0,2

0,0

20

80

140

160

1

0.01

3

600

1000

100

1000

DC (MJE18008)

5 ms

0,6

0,4

10

0.1

EXTENDED

SOA

1 ms

10

ms 1 ms

400

2

1

4

5

40

60

100

120

SECOND BREAKDOWN

DERATING

DC (MJF18008)

7

8

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate. The data of Figure 15 is

level. Second breakdown pulse limits are valid for duty

°C. Second

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown in

Figure 15 may be found at any case temperature by using the

from the data in Figure 20 and 21. At any case temperatures,

thermal limitations will reduce the power that can be handled

to values less than the limitations imposed by second

breakdown. For inductive loads, high voltage and current

must be sustained simultaneously during turn−off with the

base−to−emitter junction reverse−biased. The safe level is

specified as a reverse−biased safe operating area (Figure 16).

This rating is verified under clamped conditions so that the

device is never subjected to an avalanche mode.

800

-1, 5 V

-5 V

GUARANTEED SAFE OPERATING AREA INFORMATION

THERMAL DERATING

There are two limitations on the power handling ability

of a transistor: average junction temperature and second