NSS40200UW6T1G datasheet(2/5 Pages) ONSEMI

Part #	NSS40200UW6T1G

Description	PNP Transistor

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 5 page

NSS40200UW6T1G, NSV40200UW6T1G

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typical

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

V(BR)CEO

−40

−

Vdc

Collector − Base Breakdown Voltage

(IC = −0.1 mAdc, IE = 0)

V(BR)CBO

−40

−

Vdc

Emitter − Base Breakdown Voltage

(IE = −0.1 mAdc, IC = 0)

V(BR)EBO

−7.0

−

Vdc

Collector Cutoff Current

(VCB = −40 Vdc, IE = 0)

ICBO

−

−0.1

mAdc

Emitter Cutoff Current

(VEB = −7.0 Vdc)

IEBO

−

−0.1

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 4)

(IC = −10 mA, VCE = −2.0 V)

(IC = −500 mA, VCE = −2.0 V)

(IC = −1.0 A, VCE = −2.0 V)

(IC = −2.0 A, VCE = −2.0 V)

hFE

150

−

Collector − Emitter Saturation Voltage (Note 4)

(IC = −0.1 A, IB = −0.010 A) (Note 5)

(IC = −1.0 A, IB = −0.100 A)

(IC = −1.0 A, IB = −0.010 A)

(IC = −2.0 A, IB = −0.020 A)

VCE(sat)

−

−0.100

−

−0.020

−0.120

−0.200

−0.300

V

Base − Emitter Saturation Voltage (Note 4)

(IC = −1.0 A, IB = −0.01 A)

VBE(sat)

−

−0.76

−0.900

V

Base − Emitter Turn−on Voltage (Note 4)

(IC = −2.0 A, VCE = −3.0 V)

VBE(on)

−

−0.80

−0.900

V

Cutoff Frequency

(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)

fT

140

−

MHz

Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)

Cibo

−

500

pF

Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)

Cobo

−

100

pF

SWITCHING CHARACTERISTICS

Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)

td

−

70

ns

Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)

tr

−

150

ns

Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)

ts

−

525

ns

Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)

tf

−

155

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulsed Condition: Pulse Width = 300

msec, Duty Cycle ≤ 2%.

5. Guaranteed by design but not tested.

Similar Part No. - NSS40200UW6T1G

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NSS40200UW6T1G	66Kb / 5P	40 V, 4.0 A, Low VCE(sat) PNP Transistor September, 2006 ??Rev. 0

More results

Similar Description - NSS40200UW6T1G

Manufacturer	Part #	Datasheet	Description
Jiangsu Changjiang Elec...	BC807U	1Mb / 3P	DUAL TRANSISTOR (PNPPNP)
	BC856S	288Kb / 4P	DUAL TRANSISTOR (PNPPNP)
	MMDT2907A	1Mb / 4P	DUAL TRANSISTOR (PNPPNP)
	MMDT5401	4Mb / 4P	DUAL TRANSISTOR (PNPPNP)
	BC857S	1Mb / 4P	DUAL TRANSISTOR (PNPPNP)
	UMT2N	1Mb / 4P	DUAL TRANSISTOR (PNPPNP)
Shenzhen Jin Yu Semicon...	EMB3	551Kb / 1P	DIGITAL TRANSISTOR (PNP PNP)
Jiangsu Changjiang Elec...	BC857BV	828Kb / 4P	DUAL TRANSISTOR (PNPPNP)
	EMZ8	4Mb / 3P	DUAL TRANSISTOR (PNPPNP)
	2SA1873	934Kb / 3P	DUAL TRANSISTOR (PNPPNP)
	MMDT3906	3Mb / 4P	DUAL TRANSISTOR (PNPPNP)

More results

NSS40200UW6T1G Datasheet(PDF) 2 Page - ON Semiconductor

NSS40200UW6T1G Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - NSS40200UW6T1G

Similar Description - NSS40200UW6T1G

Html Pages

1 2 3 4 5

Datasheet Download

Link URL