NSVBC846BM3T5G datasheet(2/5 Pages) ONSEMI

Part #	NSVBC846BM3T5G

Description	General Purpose Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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BC846BM3T5G, NSVBC846BM3T5G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mA)

V(BR)CEO

65

−

V

Collector−Emitter Breakdown Voltage

(IC = 10 mA, VEB = 0)

V(BR)CES

80

−

V

Collector−Base Breakdown Voltage

(IC = 10 mA)

V(BR)CBO

80

−

V

Emitter−Base Breakdown Voltage

(IE = 1.0 mA)

V(BR)EBO

6.0

−

V

Collector Cutoff Current (VCB = 30 V)

(VCB = 30 V, TA = 150°C)

ICBO

−

15

5.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mA, VCE = 5.0 V)

(IC = 2.0 mA, VCE = 5.0 V)

hFE

−

200

150

290

−

450

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VCE(sat)

−

0.25

0.6

V

Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VBE(sat)

−

0.7

0.9

−

V

Base −Emitter Voltage (IC = 1.0 mA, VCE = 5.0 V)

Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

VBE(on)

550

580

−

645

660

−

700

770

mV

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

−

MHz

Output Capacitance

(VCB = 10 V, f = 1.0 MHz)

Cobo

−

4.5

pF

Noise Figure

(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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