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NM27C256NE200 Datasheet(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # NM27C256NE200
Description  262,144-Bit (32K x 8) High Performance CMOS EPROM
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

NM27C256NE200 Datasheet(HTML) 4 Page - National Semiconductor (TI)

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Capacitance TA ea25 C f e 1 MHz (Note 2)
Symbol
Parameter
Conditions
Typ
Max
Units
CIN
Input Capacitance
VIN e 0V
6
12
pF
COUT
Output Capacitance
VOUT e 0V
9
12
pF
AC Test Conditions
Output Load
1 TTL Gate and
CL e 100 pF (Note 8)
Input Rise and Fall Times
s
5ns
Input Pulse Levels
045 to 24V
Timing Measurement Reference Level
(Note 10)
Inputs
08V and 20V
Outputs
08V and 20V
AC Waveforms (Notes 6 7 and 9)
TLD10833 – 4
Note 1
Stresses above those listed under ‘‘Absolute Maximum Ratings’’ may cause permanent damage to the device This is stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied Exposure to absolute
maximum rating conditions for extended periods may affect device reliability
Note 2
This parameter is only sampled and is not 100% tested
Note 3
OE may be delayed up to tACC b tOE after the falling edge of CE without impacting tACC
Note 4
The tDF and tCF compare level is determined as follows
High to TRI-STATE
the measured VOH1 (DC) b 010V
Low to TRI-STATE the measured VOL1 (DC) a 010V
Note 5
TRI-STATE may be attained using OE or CE
Note 6
The power switching characteristics of EPROMs require careful device decoupling It is recommended that at least a 01 mF ceramic capacitor be used on
every device between VCC and GND
Note 7
The outputs must be restricted to VCC a 10V to avoid latch-up and device damage
Note 8
TTL Gate IOL e 16 mA IOH eb400 mA
CL e 100 pF includes fixture capacitance
Note 9
VPP may be connected to VCC except during programming
Note 10
Inputs and outputs can undershoot to b20V for 20 ns Max
Note 11
CMOS inputs VIL e GND g03V VIH e VCC g03V
4


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