IMB10A datasheet(2/11 Pages) ROHM

Part #	IMB10A

Description	General purpose Dual digital transistor

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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EMB10 / UMB10N / IMB10A

Datasheet

l

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Values

Unit

Supply voltage

VCC

-50

V

Input voltage

VIN

-12 to 5

V

Output current

IO

-100

mA

Collector current

IC(MAX)*1

-100

mA

Power dissipation

EMB10

PD*2*3

150

mW

UMB10N

PD*2*3

150

IMB10A

PD*2*4

300

Junction temperature

Tj

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

l

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Input voltage

VI(off)

VCC = -5V, IO = -100μA

-

-0.5

V

VI(on)

VO = -0.3V, IO = -5mA

-1.1

-

Output voltage

VO(on)

IO = -5mA, II = -0.25mA

-

-100

-300

mV

Input current

II

VI = -5V

-

-3.6

mA

Output current

IO(off)

VCC = -50V, VI = 0V

-

-500

nA

DC current gain

GI

VO = -5V, IO = -10mA

80

-

Input resistance

R1

-

1.54

2.2

2.86

kΩ

Resistance ratio

R2/R1

-

17

21

26

-

Transition frequency

fT*1

VCE = -10V, IE = 5mA,

f = 100MHz

-

250

-

MHz

*1 Characteristics of built-in transistor.

*2 Each terminal mounted on a reference land.

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

www.rohm.com

2/7

20150919 - Rev.002

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