>10 W, GaN Power Amplifier,

0.01 GHz to 1.1 GHz

Data Sheet

HMC1099

Rev. A

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FEATURES

High small signal gain: 18.5 dB typical

High power added efficiency (PAE): 69% typical

Instantaneous bandwidth: 0.01 GHz to 1.1 GHz

Internal prematching

Simple and compact external tuning for optimal

performance

APPLICATIONS

Extended battery operation for public mobile radios

Power amplifier stage for wireless infrastructures

Test and measurement equipment

Commercial and military radars

General-purpose transmitter amplification

GENERAL DESCRIPTION

The HMC1099 is a gallium nitride (GaN), broadband power

amplifier delivering >10 W with up to 69% PAE across an

instantaneous bandwidth of 0.01 GHz to 1.1 GHz, and with a

±0.5 dB typical gain flatness.

The HMC1099 is ideal for pulsed or continuous wave (CW)

applications, such as wireless infrastructure, radars, public

mobile radios, and general-purpose amplification.

The HMC1099 amplifier is externally tuned using low cost,

surface-mount components and is available in a compact

LFCSP package.

Multifunction pin names may be referenced by their relevant

function only.

FUNCTIONAL BLOCK DIAGRAM

17

1

3

4

2

GND

NIC

NIC

5

6

NIC

7

NIC

8

GND

GND

18 NIC

19 NIC

22 NIC

23 NIC

NIC =

NO INTERNAL CONNECTION. THESE PINS

ARE NOT CONNECTED INTERNALLY.

24 GND

HMC1099

PACKAGE

BASE

Figure 1.