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HMC1114LP5DE Datasheet(PDF) 4 Page - Analog Devices |
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HMC1114LP5DE Datasheet(HTML) 4 Page - Analog Devices |
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4 / 16 page  Data Sheet HMC1114 Rev. 0 | Page 3 of 15 SPECIFICATIONS ELECTRICAL SPECIFICATIONS TA = 25°C, VDD = 28 V, IDQ = 150 mA, frequency range = 2.7 GHz to 3.2 GHz, unless otherwise noted. Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 2.7 3.2 GHz GAIN Small Signal Gain 32 35 dB Gain Flatness ±0.5 dB Power Gain for 4 dB Compression 29 dB Power Gain for Saturated Output Power 25.5 dB Measurement taken at PIN = 16 dBm RETURN LOSS Input 14 dB Output 11 dB POWER Output Power for 4 dB Compression P4dB 39 dBm Saturated Output Power PSAT 41.5 dBm Measurement taken at PIN = 16 dBm Power Added Efficiency PAE 54 % OUTPUT THIRD-ORDER INTERCEPT IP3 44 Measurement taken at POUT/tone = 30 dBm TARGET QUIESCENT CURRENT IDQ 150 mA Adjust the gate control voltage (VGG1, VGG2) between −8 V and 0 V to achieve an IDQ = 150 mA typical TA = 25°C, VDD = 28 V, IDQ = 150 mA, frequency range = 3.2 GHz to 3.8 GHz, unless otherwise noted. Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 3.2 3.8 GHz GAIN Small Signal Gain 29 32 dB Gain Flatness ±1 dB Power Gain for 4 dB Compression 28 dB Power Gain for Saturated Output Power 25 dB Measurement taken at PIN = 16 dBm RETURN LOSS Input 25 dB Output 9 dB POWER Output Power for 4 dB Compression P4dB 40 dBm Saturated Output Power PSAT 40.5 dBm Measurement taken at PIN = 16 dBm Power Added Efficiency PAE 53 % OUTPUT THIRD-ORDER INTERCEPT IP3 44 Measurement taken at POUT/tone = 30 dBm TARGET QUIESCENT CURRENT IDQ 150 mA Adjust the gate control voltage (VGG1, VGG2) between −8 V and 0 V to achieve an IDQ = 150 mA typical TOTAL SUPPLY CURRENT BY VDD Table 3. Parameter Symbol Min Typ Max Unit Test Conditions/Comments SUPPLY CURRENT IDQ Adjust VGG1, VGG2 to achieve an IDQ = 150 mA typical VDD = 25 V 150 mA VDD = 28 V 150 mA VDD = 32 V 150 mA |
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