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SA57000-29D Datasheet(PDF) 4 Page - NXP Semiconductors

Part # SA57000-29D
Description  CapFREEE 150 mA, low-noise, low dropout regulator with thermal protection
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SA57000-29D Datasheet(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Product data
SA57000-XX
CapFREE
™ 150 mA, low-noise, low dropout regulator
with thermal protection
2001 Aug 27
4
CHARACTERISTICS
VIN = VOUT(nom) + 0.5 V. (Note 1.)
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VIN
input voltage
VOUT(nom)
5.5
V
output voltage accuracy 2
IOUT = 1 mA
Tamb = +25 °C
±1
%
–40
°C ≤ Tamb ≤ +85 °C
–2.0
2.0
%
ILIM
current limit
160
300
mA
IQ
ground pin current
IOUT = 1 mA to 150 mA
85
150
µA
dropout voltage 3
IOUT = 1 mA
1
mV
IOUT = 50 mA
55
120
mV
IOUT = 150 mA
165
mV
∆VLNR
line regulation
VIN = (VOUT + 0.1 V) to 5.5 V; IOUT = 20 mA
0.1
%/V
∆VLDR
load regulation
IOUT = 1 mA to 150 mA
0.01
0.02
%/mA
en
output voltage noise
f = 10 Hz to 100 kHz, COUT = 10 µF
30
µVRMS
Shutdown
VIH
PWRON input threshold
(HIGH ON-state)
VIN → VOUT(nom) → 5.5 V
0.7
× VIN
V
VIL
PWRON input threshold
(HIGH ON-state)
VIN → VOUT(nom) → 5.5 V
0.3
× VIN
V
IPWRON
PWRON input bias current
VPWRON = VIN
Tamb = +25 °C
0.01
1
µA
Tamb = +85 °C
0.05
µA
IQ(SHDN)
shutdown supply current
VOUT = 0 V
Tamb = +25 °C
0.05
1
µA
Tamb = +85 °C
0.2
1
µA
tPWRON
power-on start-up time 4
IOUT = 1 mA, COUT = 100 nF
Tamb = +25 °C
25
100
µs
Tamb = –40 to +85 °C
35
200
µs
Thermal protection (Note 2)
TSHDN
thermal shut-down temperature
144
°C
∆TSHDN
thermal shut-down hysteresis
13
°C
PWROK output (power and temperature OK) (Note 2)
PWROK trip temperature
127
°C
PWROK trip temperature
hysteresis
12
°C
PWROK trip as percentage of
VOUT(nom)
–3.5
–6
–8
%
PWROK hysteresis as
percentage of VOUT(nom)
2
%
PWROK output (when tripped)
ISINK = 0.5 mA
0.1
0.4
V
NOTES:
1. Limits are production tested at Tamb = +25 °C. All devices are 100% production tested at 25 °C. Limits over the operating tempreature are
guaranteed by design.
2. Accuracy
±2 °C over temperature range guaranteed by design and characterization.
3. The dropout voltage is defined as VIN – VOUT, where VOUT is 100 mV below the value of VOUT for VIN = VOUT + 0.5 V..
4. Time needed for VOUT to reach 95% of VOUT(nom).


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