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SA57000-29D Datasheet(PDF) 4 Page - NXP Semiconductors |
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SA57000-29D Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page Philips Semiconductors Product data SA57000-XX CapFREE ™ 150 mA, low-noise, low dropout regulator with thermal protection 2001 Aug 27 4 CHARACTERISTICS VIN = VOUT(nom) + 0.5 V. (Note 1.) SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIN input voltage VOUT(nom) – 5.5 V output voltage accuracy 2 IOUT = 1 mA Tamb = +25 °C – ±1 – % –40 °C ≤ Tamb ≤ +85 °C –2.0 – 2.0 % ILIM current limit 160 300 – mA IQ ground pin current IOUT = 1 mA to 150 mA – 85 150 µA dropout voltage 3 IOUT = 1 mA – 1 – mV IOUT = 50 mA – 55 120 mV IOUT = 150 mA – 165 – mV ∆VLNR line regulation VIN = (VOUT + 0.1 V) to 5.5 V; IOUT = 20 mA – – 0.1 %/V ∆VLDR load regulation IOUT = 1 mA to 150 mA – 0.01 0.02 %/mA en output voltage noise f = 10 Hz to 100 kHz, COUT = 10 µF – 30 – µVRMS Shutdown VIH PWRON input threshold (HIGH ON-state) VIN → VOUT(nom) → 5.5 V 0.7 × VIN – – V VIL PWRON input threshold (HIGH ON-state) VIN → VOUT(nom) → 5.5 V – – 0.3 × VIN V IPWRON PWRON input bias current VPWRON = VIN Tamb = +25 °C – 0.01 1 µA Tamb = +85 °C – 0.05 – µA IQ(SHDN) shutdown supply current VOUT = 0 V Tamb = +25 °C – 0.05 1 µA Tamb = +85 °C – 0.2 1 µA tPWRON power-on start-up time 4 IOUT = 1 mA, COUT = 100 nF Tamb = +25 °C – 25 100 µs Tamb = –40 to +85 °C – 35 200 µs Thermal protection (Note 2) TSHDN thermal shut-down temperature – 144 – °C ∆TSHDN thermal shut-down hysteresis – 13 – °C PWROK output (power and temperature OK) (Note 2) PWROK trip temperature – 127 – °C PWROK trip temperature hysteresis – 12 – °C PWROK trip as percentage of VOUT(nom) –3.5 –6 –8 % PWROK hysteresis as percentage of VOUT(nom) – 2 – % PWROK output (when tripped) ISINK = 0.5 mA – 0.1 0.4 V NOTES: 1. Limits are production tested at Tamb = +25 °C. All devices are 100% production tested at 25 °C. Limits over the operating tempreature are guaranteed by design. 2. Accuracy ±2 °C over temperature range guaranteed by design and characterization. 3. The dropout voltage is defined as VIN – VOUT, where VOUT is 100 mV below the value of VOUT for VIN = VOUT + 0.5 V.. 4. Time needed for VOUT to reach 95% of VOUT(nom). |
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