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ZSPM9010ZA1R Datasheet(PDF) 6 Page - Integrated Device Technology |
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ZSPM9010ZA1R Datasheet(HTML) 6 Page - Integrated Device Technology |
6 / 29 page ZSPM9010 Datasheet © 2016 Integrated Device Technology, Inc. 6 January 25, 2016 1.2. Recommended Operating Conditions The “Recommended Operating Conditions” table defines the conditions for actual device operation. Recom- mended operating conditions are specified to ensure optimal performance to the datasheet specifications. IDT does not recommend exceeding them or designing to the “Absolute Maximum Ratings.” PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Control Circuit Supply Voltage VCIN 4.5 5.0 5.5 V Gate Drive Circuit Supply Voltage VDRV 4.5 5.0 5.5 V Output Stage Supply Voltage VIN 3.0 12.0 15.0 V 1.3. Electrical Parameters Typical values are VIN = 12V, VDRV = 12V, and TAMB = +25°C unless otherwise noted. PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Basic Operation Quiescent Current IQ IQ=IVCIN+IVDRV, PWM=LOW or HIGH or float 2 mA Under-Voltage Lock-Out UVLO Threshold UVLO VCIN rising 2.9 3.1 3.3 V UVLO Hysteresis UVLO_Hyst 0.4 V PWM Input Pull-Up Impedance RUP_PWM (VCIN = VDRV = 5V ±10%) 26 kΩ Pull-Down Impedance RDN_PWM (VCIN = VDRV = 5V ±10%) 12 kΩ PWM High-Level Voltage VIH_PWM (VCIN = VDRV = 5V ±10%) 1.88 2.25 2.61 V (VCIN = VDRV = 5V ±5%) 2.00 2.25 2.50 V Tri-state Upper Threshold VTRI_HI (VCIN = VDRV = 5V ±10%) 1.84 2.20 2.56 V (VCIN = VDRV = 5V ±5%) 1.94 2.20 2.46 V Tri-state Lower Threshold VTRI_LO (VCIN = VDRV = 5V ±10%) 0.70 0.95 1.19 V (VCIN = VDRV = 5V ±5%) 0.75 0.95 1.15 V PWM Low-Level Voltage VIL_PWM (VCIN = VDRV = 5V ±10%) 0.62 0.85 1.13 V (VCIN = VDRV = 5V ±5%) 0.66 0.85 1.09 V Tri-state Shutoff Time tD_HOLD-OFF 160 200 ns Tri-state Open Voltage VHiZ_PWM (VCIN = VDRV = 5V ±10%) 1.40 1.60 1.90 V (VCIN = VDRV = 5V ±5%) 1.45 1.60 1.80 V |
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