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LM9036 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LM9036 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 7 page Electrical Characteristics - LM9036-3.3 (Continued) V IN = 14V, IOUT = 10 mA, TJ = 25˚C, unless otherwise specified. Boldface limits apply over entire operating temperature range Parameter Conditions Min (Note 5) Typical (Note 4) Max (Note 5) Units Short Circuit Current (I SC)VOUT = 0V 65 120 250 mA Ripple Rejection (PSRR) V ripple =1Vrms,Fripple = 120Hz −40 −60 dB Output Bypass Capacitance (C OUT) 0.3 Ω≤ ESR ≤ 8Ω 0.1mA ≤ I OUT ≤ 50mA 22 33 µF Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating the device beyond its specified operating ratings. Note 2: Human body model, 100pF discharge through a 1.5k Ω resistor. Note 3: The maximum power dissipation is a function of TJmax, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD =(TJmax −TA)/θJA. If this dissipation is exceeded, the die temperature will rise above 150˚C and the LM9036 will go into thermal shutdown. Note 4: Typicals are at 25˚C (unless otherwise specified) and represent the most likely parametric norm. Note 5: Tested limits are guaranteed to National’s AOQL (Average Outgoing Quality Level) and 100% tested. Note 6: To ensure constant junction temperature, pulse testing is used. Note 7: Worst case (Free Air) per EIA / JESD51-3. Note 8: Typical θJA with 1 square inch of 2oz copper pad area directly under the ground tab. Ordering Information TO-252 SOIC Mini SOIC 3.30V LM9036DT-3.3 LM9036M-3.3 LM9036MM-3.3 5.00V LM9036DT-3.3 LM9036M-5.0 LM9036MM-5.0 Typical Performance Characteristics Dropout Voltage Quiescent Current 20001108 20001111 www.national.com 4 |
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Similar Description - LM9036 |
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