LP5912Q2.8DRVRQ1 datasheet(5/33 Pages) TI1

Part #	LP5912Q2.8DRVRQ1

Description	Automotive 500-mA Low-Noise, Low-IQ LDO

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LP5912-Q1

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SNVSAA8C – DECEMBER 2015 – REVISED SEPTEMBER 2016

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(1)

All voltages are with respect to the device GND pin, unless otherwise stated.

(2)

Minimum and maximum limits are ensured through test, design, or statistical correlation over the junction temperature (TJ) range of

–40°C to +125°C, unless otherwise stated. Typical values represent the most likely parametric norm at TA = 25°C, and are provided for

reference purposes only.

(3)

In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP =

125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to-ambient thermal resistance of the

part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).

(4)

Short-circuit current (ISC) is equivalent to current limit. To minimize thermal effects during testing, ISC is measured with VOUT pulled to

100 mV below its nominal voltage.

(5)

Reverse current (IRO) is measured at the IN pin.

(6)

Quiescent current is defined here as the difference in current between the input voltage source and the load at VOUT.

(7)

Ground current is defined here as the total current flowing to ground as a result of all input voltages applied to the device (IQ + IEN).

(8)

Dropout voltage (VDO) is the voltage difference between the input and the output at which the output voltage drops to 150 mV below its

nominal value when VIN = VOUT + 0.5 V. Dropout voltage is not a valid condition for output voltages less than 1.6 V as compliance with

the minimum operating voltage requirement cannot be assured.

7.5 Electrical Characteristics

VIN = VOUT(NOM) + 0.5 V or 1.6 V, whichever is greater; VEN = 1.3 V, CIN = 1 µF, COUT = 1 µF, IOUT = 1 mA (unless otherwise

stated).

(1) (2) (3)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OUTPUT VOLTAGE

ΔVOUT

Output voltage tolerance

For VOUT(NOM) ≥ 3.3 V:

VOUT(NOM) + 0.5 V ≤ VIN ≤ 6.5 V,

IOUT = 1 mA to 500 mA

–2%

2%

For 1.1 V

≤ VOUT(NOM) < 3.3 V:

VOUT(NOM) + 0.5 V ≤ VIN ≤ 6.5 V,

IOUT = 1 mA to 500 mA

–3%

3%

For VOUT(NOM) < 1.1 V:

1.6 V

≤ VIN ≤ 6.5 V,

IOUT = 1 mA to 500 mA

Line regulation

For VOUT(NOM) ≥ 1.1 V:

VOUT(NOM) + 0.5 V ≤ VIN ≤ 6.5 V

0.8

%/V

For VOUT(NOM) < 1.1 V:

1.6 V

≤ VIN ≤ 6.5 V

Load regulation

IOUT = 1 mA to 500 mA

0.0022

%/mA

CURRENT LEVELS

ISC

Short-circuit current limit

TJ = 25°C, see

(4)

700

900

1100

mA

IRO

Reverse leakage current(5)

VIN < VOUT

10

150

µA

IQ

Quiescent current(6)

VEN = 1.3 V, IOUT = 0 mA

30

55

µA

VEN = 1.3 V, IOUT = 500 mA

400

600

IQ(SD)

Quiescent current,

shutdown mode(6)

VEN = 0 V

–40°C

≤ TJ ≤ 85°C

0.2

1.5

µA

VEN = 0 V

0.2

5

IG

Ground current(7)

VEN = 1.3 V, IOUT = 0 mA

35

µA

VDO DROPOUT VOLTAGE

VDO

Dropout voltage(8)

IOUT = 500 mA, 1.6 V ≤ VOUT(NOM) < 3.3 V

170

250

mV

IOUT = 500 mA, 3.3 V ≤ VOUT(NOM) ≤ 5.5 V

95

180

mV

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