UMD9N datasheet(2/13 Pages) ROHM

Part #	UMD9N

Description	General purpose (dual digital transistor)

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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2 / 13 page

EMD9 / UMD9N / IMD9A

Datasheet

l

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol DTr1(NPN) DTr2(PNP)

Unit

Supply voltage

VCC

50

-50

V

Input voltage

VIN

-6 to 40

-40 to 6

V

Output current

IO

70

-70

mA

Collector current

IC(MAX)*1

100

-100

mA

Power dissipation

EMD9/ UMD9N

PD*2*3

150

mW/Total

IMD9A

PD*2*4

300

Junction temperature

Tj

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

l

lElectrical characteristics (Ta = 25°C) <For DTr1(NPN)>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Input voltage

VI(off)

VCC = 5V, IO = 100μA

-

0.3

V

VI(on)

VO = 0.3V, IO = 1mA

1.4

-

Output voltage

VO(on)

IO = 5mA, II = 0.25mA

-

100

300

mV

Input current

II

VI = 5V

-

880

μA

Output current

IO(off)

VCC = 50V, VI = 0V

-

500

nA

DC current gain

GI

VO = 5V, IO = 5mA

68

-

Input resistance

R1

-

7

10

13

kΩ

Resistance ratio

R2/R1

-

3.7

4.7

5.7

-

Transition frequency

fT*1

VCE = 10V, IE = -5mA,

f = 100MHz

-

250

-

MHz

l

lElectrical characteristics (Ta = 25°C) <For DTr2(PNP)>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Input voltage

VI(off)

VCC = -5V, IO = -100μA

-

-0.3

V

VI(on)

VO = -0.3V, IO = -1mA

-1.4

-

Output voltage

VO(on)

IO = -5mA, II = -0.25mA

-

-100

-300

mV

Input current

II

VI = -5V

-

-880

μA

Output current

IO(off)

VCC = -50V, VI = 0V

-

-500

nA

DC current gain

GI

VO = -5V, IO = -5mA

68

-

Input resistance

R1

-

7

10

13

kΩ

Resistance ratio

R2/R1

-

3.7

4.7

5.7

-

Transition frequency

fT*1

VCE = -10V, IE = 5mA,

f = 100MHz

-

250

-

MHz

*1 Characteristics of built-in transistor.

*2 Each terminal mounted on a reference land.

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

www.rohm.com

2/9

20151020 - Rev.002

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