MRF1550T1 datasheet(2/12 Pages) MOTOROLA

Part #	MRF1550T1

Description	RF POWER FIELD EFFECT TRANSISTORS

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Manufacturer	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

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MRF1550T1 MRF1550FT1

2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

IDSS

—

1

µAdc

Gate–Source Leakage Current

(VGS = 10 Vdc, VDS = 0 Vdc)

IGSS

—

0.5

µAdc

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 12.5 Vdc, ID = 800 µA)

VGS(th)

1

—

3

Vdc

Drain–Source On–Voltage

(VGS = 5 Vdc, ID = 1.2 A)

RDS(on)

—

0.5

Ω

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 4.0 Adc)

VDS(on)

—

1

Vdc

DYNAMIC CHARACTERISTICS

Input Capacitance (Includes Input Matching Capacitance)

(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)

Ciss

—

500

pF

Output Capacitance

(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)

Coss

—

250

pF

Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)

Crss

—

35

pF

RF CHARACTERISTICS (In Motorola Test Fixture)

Common–Source Amplifier Power Gain

(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)

f = 175 MHz

Gps

10

—

dB

Drain Efficiency

(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)

f = 175 MHz

η

50

—

%

Load Mismatch

(VDD = 15.6 Vdc, f = 175 MHz, 2 dB Input Overdrive, VSWR 20:1 at

All Phase Angles)

Ψ

No Degradation in Output Power

Before and After Test

Freescale Semiconductor, Inc.

For More Information On This Product,

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