NJT4031N datasheet(4/5 Pages) ONSEMI

Part #	NJT4031N

Description	Bipolar Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NJT4031N, NJV4031NT1G, NJV4031NT3G

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TYPICAL CHARACTERISTICS

Figure 8. Base−Emitter Saturation Voltage

Figure 9. Base−Emitter Saturation Voltage

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

0

0.2

1.4

Figure 10. Input Capacitance

Figure 11. Output Capacitance

VEB, EMITTER BASE VOLTAGE (V)

VCB, COLLECTOR BASE VOLTAGE (V)

6

5

4

3

2

1

0

50

100

150

200

250

300

350

70

60

50

40

30

20

10

0

20

40

60

80

100

Figure 12. Current−Gain Bandwidth Product

Figure 13. Safe Operating Area

IC, COLLECTOR CURRENT (A)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

10

0.1

0.01

0.001

0

240

40

120

200

100

10

1

0.01

0.1

1

10

0.4

0.6

0.8

1.0

1.2

IC/IB = 10

150°C

−55°C

25°C

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

0

0.2

1.4

0.4

0.6

0.8

1.0

1.2

IC/IB = 50

150°C

−55°C

25°C

TJ = 25°C

ftest = 1 MHz

TJ = 25°C

ftest = 1 MHz

80

160

TJ = 25°C

ftest = 1 MHz

VCE = 10 V

0.5 ms

10 ms

100 ms

1 ms

400

450

8

7

90

80

1

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