© Semiconductor Components Industries, LLC, 2013

August, 2013 − Rev. 4

1

Publication Order Number:

MMBT4401WT1/D

MMBT4401WT1G

Switching Transistor

NPN Silicon

Features

Human Body Model; 4 kV,

Machine Model; 400 V

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

40

Vdc

Collector−Base Voltage

60

Vdc

Emitter−Base Voltage

6.0

Vdc

Collector Current − Continuous

600

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

150

mW

Thermal Resistance,

Junction−to−Ambient

833

°C/W

Junction and Storage Temperature

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

RecommendedOperating Conditions may affect device reliability.

Device

Package

ORDERING INFORMATION

SC−70 (SOT−323)

CASE 419

STYLE 3

2

3

1

MARKING DIAGRAM

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

MMBT4401WT1G

SC−70

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

2X MG

G

1

(Note: Microdot may be in either location)

*Date Code orientation may vary depending upon

manufacturinglocation.