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RD30HUF1 Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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RD30HUF1 Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
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4 / 7 page  MITSUBISHI RF POWER MOS FET RD30HUF1 Silicon MOSFET Power Transistor,520MHz,30W RD30HUF1 MITSUBISHI ELECTRIC REV.1 14 MAY. 2003 4/7 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS EQUIVALENT CIRCUIT(f=520MHz) 15pF 15/15pF L2:2Turns ,I.D6m m ,D1.6m m P = 1 s ilver plateted c opper wire C3:2200pF ,330uF in parallel C2:2200pF *2 in parallel L3 C3 14 8 12 14 8.2k O HM L2 7/5pF 15/5/7/15pF 12 10 5 100 M ic ro s trip line width= 4.2m m /50O HM ,er:2.7,t= 1.6m m Note:B oard m aterial-Teflon s ubs trate C1:2200pF ,10uF in parallel C2 RF -O UT C1 L1:3Turns ,I.D6m m ,D1.6m m P = 1 s ilver plateted c opper wire 100O HM Vgg Vdd RF -IN 56pF Dim ens ions :m m RD30HUF1 15/5pF 56pF 5 100 9.1K O HM L1 8 L2:4Turns ,I.D6m m ,D1.6m m P = 1 s ilver plateted c opper wire |
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