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MB95F633KPMC-G-SNE2 Datasheet(PDF) 5 Page - Cypress Semiconductor |
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MB95F633KPMC-G-SNE2 Datasheet(HTML) 5 Page - Cypress Semiconductor |
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5 / 102 page  MB95630H Series Document Number: 002-04627 Rev. *A Page 5 of 102 2. Packages And Corresponding Products : Available 3. Differences Among Products And Notes On Product Selection • Current consumption When using the on-chip debug function, take account of the current consumption of Flash memory program/erase. For details of current consumption, see “Electrical Characteristics”. • Package For details of information on each package, see “Packages And Corresponding Products” and “Package Dimension”. • Operating voltage The operating voltage varies, depending on whether the on-chip debug function is used or not. For details of operating voltage, see “Electrical Characteristics”. • On-chip debug function Part number Parameter MB95F632H MB95F633H MB95F634H MB95F636H MB95F632K MB95F633K MB95F634K MB95F636K Flash memory • It supports automatic programming (Embedded Algorithm), and program/erase/erase- suspend/erase-resume commands. • It has a flag indicating the completion of the operation of Embedded Algorithm. • Flash security feature for protecting the content of the Flash memory Standby mode There are four standby modes as follows: • Stop mode • Sleep mode •Watch mode • Time-base timer mode In standby mode, two further options can be selected: normal standby mode and deep standby mode. Package FPT-32P-M30 DIP-32P-M06 LCC-32P-M19 Part number Package MB95F632H MB95F633H MB95F634H MB95F636H MB95F632K MB95F633K MB95F634K MB95F636K FPT-32P-M30 DIP-32P-M06 LCC-32P-M19 Number of program/erase cycles 1000 10000 100000 Data retention time 20 years 10 years 5 years |
Similar Part No. - MB95F633KPMC-G-SNE2 |
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