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RHU002N06 Datasheet(PDF) 2 Page - Rohm |
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RHU002N06 Datasheet(HTML) 2 Page - Rohm |
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2 / 5 page  RHU002N06 Transistors 2/4 Electrical characteristics (Ta=25 °C) Parameter Test Conditions VGS=0V f=1MHz VDS=10V VGS=10V ID=100mA, VDD 30V RL=300 Ω RGS=10 Ω µA pF Ω mS Unit V µA V pF pF ns ns ns ns nC nC ID=200mA, VGS=10V − − 60 − 1 − 100 Min. − − − − − − − − 15 − − − − 1.7 − Typ. 8 4 6 5 12 95 0.3 0.6 − ±10 − 1 2.5 2.4 ID=200mA, VGS=4V − 2.8 4.0 − Max. − − − − − − − VDS=10V, ID=200mA ID=10 µA, VGS=0V VGS=±20V, VDS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA nC ID=200mA VGS=10V − 2.2 4.4 − ∗2 Pulsed ∗1 PW≤300µs, Duty cycle≤1% IGSS IDSS l Yfs l∗1 Ciss Symbol Coss Crss tr∗2 tf∗2 Qgd∗2 Qgs∗2 Qg∗2 V (BR) DSS VGS (th) RDS (on)∗1 td (on)∗2 td (off)∗2 VDD 30V Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Packaging specifications RHU002N06 Type T106 3000 Package Code Basic ordering unit (pieces) Taping Electrical characteristic curves 0.8 0.4 0.3 0.5 0.6 0.7 0.1 0.2 0.0 Fig.1 Typical Output Characteristics 0.0 0.5 1.0 1.5 2.0 2.5 4.0 3.0 3.5 DRAIN-SOURCE VOLTAGE : VDS (V) VGS =3V 10V 3.5V 8V 6V 4V Ta =25°C Pulsed 0.01 0.1 1 1.0 0.5 0.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 Pulsed VDS= 10V Ta= −25˚C 25˚C 75˚C 125˚C 0.001 GATE-SOURCE VOLTAGE : VGS (V) Fig.2 Typical Transfer Characteristics Pulsed VDS =10V ID =1mA 2.5 150 −50 −25 0 1.0 1.5 2.0 0.5 0.0 50 75 100 125 25 CHANNEL TEMPERATURE : Tch ( °C) Fig.3 Gate Threshold Voltage vs. Channel Temperature |
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