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LM759CH Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM759CH Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 14 page  Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Storage Temperature Range Metal Can b 65 Cto a175 C Plastic Package b 65 Cto a150 C Operating Junction Temperature Range Military (LM759M) b 55 Cto a150 C Commercial (LM759C LM77000C) 0 Cto a125 C Lead Temperature Metal Can (soldering 60 sec) 300 C Plastic Package (soldering 10 sec) 265 C Internal Power Dissipation (Note 1) Internally Limited Supply Voltage g 18V Differential Input Voltage 30V Input Voltage (note 2) g 15V LM759 Electrical Characteristics TJ e 25 C VCC e g15V unless otherwise specified Symbol Parameter Conditions Min Typ Max Units VIO Input Offset Voltage RS s 10 kX 10 30 mV IIO Input Offset Current 50 30 nA IIB Input Bias Current 50 150 nA ZI Input Impedance 025 15 MX ICC Supply Current 12 18 mA VIR Input Voltage Range Va b 2V to Vb Va b 2V to Vb V IOS Output Short Circuit Current lVCC–VOl e 30V g 200 mA IO PEAK Peak Output Current 30V s lVCC–VOl s 10V g 325 g 500 mA AVS Large Signal Voltage Gain RL t 50X VO e g10V 50 200 VmV TR Transient Response Rise Time RL e 50X AV e 10 300 ns Overshoot 50 % SR Slew Rate RL e 50X AV e 10 06 V ms BW Bandwidth AV e 10 10 MHz The following specifications apply for b55 C s TJ s a150 C VIO Input Offset Voltage RS s 10 kX 45 mV IIO Input Offset Current 60 nA IIB Input Bias Current 300 nA CMRR Common Mode Rejection Ratio RS s 10 kX 80 100 dB PSRR Power Supply Rejection Ratio RS s 10 kX 80 100 dB AVS Large Signal Voltage Gain RL t 50X VO e g10V 25 200 VmV VOP Output Voltage Swing RL e 50X g 10 g 125 V 2 |
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Similar Description - LM759CH |
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