Preliminary Specifications

©2003 Silicon Storage Technology, Inc.

S71243-03-000

11/03

1

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

16 Mbit (x8) Multi-Purpose Flash Plus

SST39VF1681 / SST39VF1682

FEATURES:

•

Organized as 2M x8

•

Single Voltage Read and Write Operations

– 2.7-3.6V

•

Superior Reliability

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

•

Low Power Consumption (typical values at 5 MHz)

– Active Current: 9 mA (typical)

– Standby Current: 3 µA (typical)

– Auto Low Power Mode: 3 µA (typical)

•

Hardware Block-Protection/WP# Input Pin

– Top Block-Protection (top 64 KByte)

for SST39VF1682

– Bottom Block-Protection (bottom 64 KByte)

for SST39VF1681

•

Sector-Erase Capability

– Uniform 4 KByte sectors

•

Block-Erase Capability

– Uniform 64 KByte blocks

•

Chip-Erase Capability

•

Erase-Suspend/Erase-Resume Capabilities

•

Hardware Reset Pin (RST#)

•

Security-ID Feature

– SST: 128 bits; User: 128 bits

•

Fast Read Access Time:

– 70 ns

– 90 ns

•

Latched Address and Data

•

Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Byte-Program Time: 7 µs (typical)

•

Automatic Write Timing

•

End-of-Write Detection

– Toggle Bits

– Data# Polling

•

CMOS I/O Compatibility

•

JEDEC Standard

– Flash EEPROM Pinouts and Command sets

•

Packages Available

– 48-ball TFBGA (6mm x 8mm)

– 48-lead TSOP (12mm x 20mm)

PRODUCT DESCRIPTION

The SST39VF168x devices are 2M x8 CMOS Multi-Pur-

pose Flash Plus (MPF+) manufactured with SST’s propri-

etary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick-oxide tunneling injec-

tor attain better reliability and manufacturability compared

with alternate approaches. The SST39VF168x write (Pro-

gram or Erase) with a 2.7-3.6V power supply. These

devices conform to JEDEC standard pinouts for x8 mem-

ories.

Featuring

high

performance

Byte-Program,

the

SST39VF168x devices provide a typical Byte-Program

time of 7 µsec. These devices use Toggle Bit or Data# Poll-

ing to indicate the completion of Program operation. To pro-

tect against inadvertent write, they have on-chip hardware

and Software Data Protection schemes. Designed, manu-

factured, and tested for a wide spectrum of applications,

these devices are offered with a guaranteed typical endur-

ance of 100,000 cycles. Data retention is rated at greater

than 100 years.

The SST39VF168x devices are suited for applications that

require convenient and economical updating of program,

configuration, or data memory. For all system applications,

they significantly improve performance and reliability, while

lowering power consumption. They inherently use less

energy during Erase and Program than alternative flash

technologies. The total energy consumed is a function of

the applied voltage, current, and time of application. Since

for any given voltage range, the SuperFlash technology

uses less current to program and has a shorter erase time,

the total energy consumed during any Erase or Program

operation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles.

To meet high density, surface mount requirements, the

SST39VF168x are offered in both 48-ball TFBGA and

48-lead TSOP packages. See Figures 1 and 2 for pin

assignments.

SST39VF1681 / 16822.7V 16Mb (x8) MPF+ memories