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Advance Product Datasheet

2

SYMBOL

PARAMETER 6/

VALUE

NOTES

Vd1, Vd2T

POSITIVE SUPPLY VOLTAGE

Drain Voltage

8 V

Id1

Id2T

POSITIVE SUPPLY CURRENT

Drain Current

Drain Current

100 mA

300mA

1/

POWER DISSIPATION

4 W

2/

Vg1, Vg2

Ig1, Ig2

NEGATIVE GATE

Voltage

Gate Current

0 V to –3 V

5 mA

Vctrl1, Vctrl2

Ictrl1, Ictrl2

CONTROL GATE

Voltage

Gate Current

Vd/2 to –3 V

5 mA

3/

RF INPUT

Sinusoidal Continuous Wave Power

10.7Gb/s PRBS Input Voltage Peak to Peak

23 dBm

4 Vpp

OPERATING CHANNEL TEMPERATURE

STORAGE TEMPERATURE

TGA4953EPU

Notes:

1/ Assure the combination of Vd and Id does not exceed maximum power dissipation rating.

3/ Assure Vctl1 never exceeds Vd1 and assure Vctrl2 never exceeds Vd2 during bias up and down sequences.

4/ These ratings apply to each individual FET.

5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum

life, it is recommended that junction temperatures be maintained at the lowest possible levels.

6/ These ratings represent the maximum operable values for the device.

MAXIMUM RATINGS

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.