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TJA1020 Datasheet(PDF) 10 Page - NXP Semiconductors |
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TJA1020 Datasheet(HTML) 10 Page - NXP Semiconductors |
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10 / 22 page  2004 Jan 13 10 Philips Semiconductors Product specification LIN transceiver TJA1020 IIL LOW-level input current VTXD =0V −50 +5 µA IOL LOW-level output current (local wake-up request) standby mode; VNWAKE =0V; VLIN =VBAT; VTXD = 0.4 V 1.5 3 − mA Pin NSLP VIH HIGH-level input voltage 2 − 7V VIL LOW-level input voltage −0.3 − +0.8 V Vhys NSLP hysteresis voltage 0.03 − 0.5 V RNSLP NSLP pull-down resistor VNSLP = 5 V 125 350 800 k Ω IIL LOW-level input current VNSLP =0V −50 +5 µA Pin RXD (open-drain) IOL LOW-level output current normal slope mode; VLIN =0V; VRXD = 0.4 V 1.3 3.5 − mA ILH HIGH-level leakage current normal slope mode; VLIN =VBAT; VRXD =5V −50 +5 µA Pin NWAKE VIH HIGH-level input voltage VBAT − 1 − VBAT + 0.3 V VIL LOW-level input voltage −0.3 − VBAT − 3.3 V IIL NWAKE pull-up current VNWAKE =0V −30 −10 −3 µA ILH HIGH-level leakage current VNWAKE =27V; VBAT =27V −50 +5 µA Pin INH Rsw(INH) switch-on resistance between pins BAT and INH standby; low slope or normal slope mode; IINH = −15 mA; VBAT =12V − 30 50 Ω ILH HIGH-level leakage current sleep mode; VINH = 27 V; VBAT =27V −50 +5 µA Pin LIN Vo(reces) LIN recessive output voltage VTXD =5V; ILIN = 0 mA 0.9VBAT − VBAT V Vo(dom) LIN dominant output voltage VTXD =0V; VBAT = 7.3 V −− 1.2 V VTXD =0V; VBAT = 7.3; RL =1kΩ 0.6 −− V VTXD =0V; VBAT =18V −− 2.0 V VTXD =0V; VBAT =18V; RL =1kΩ 0.8 −− V ILH HIGH-level leakage current VLIN =VBAT −10 +1 µA IIL LIN pull-up current sleep mode; VLIN =0V; VNSLP =0V −2 −5 −10 µA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
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