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NRVTSAF345T3G Datasheet(PDF) 2 Page - ON Semiconductor |
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NRVTSAF345T3G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page NTSAF345, NRVTSAF345 www.onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (TL = 112°C) IO 3.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TL = 103°C IFRM 6.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature (Note 1) TJ −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 25 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 90 °C/W 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Rating Symbol Typ Max Unit Instantaneous Forward Voltage (Note 3) (IF = 3 A, TJ = 25°C) (IF = 3 A, TJ = 125°C) VF 0.482 0.4 0.63 0.55 V Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR 1.75 1.45 7.5 3 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. |
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