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MBRAF2H100 Datasheet(PDF) 1 Page - ON Semiconductor |
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MBRAF2H100 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 3 1 Publication Order Number: MBRAF2H100/D MBRAF2H100 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Low Profile Package for Space Constrained Applications • Rectangular Package for Automated Handling • Highly Stable Oxide Passivated Junction • 150°C Operating Junction Temperature • Guard−Ring for Stress Protection • These are Pb−Free and Halide−Free Devices Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds • Cathode Polarity Band • Device Meets MSL 1 Requirements • ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B Device Package Shipping† ORDERING INFORMATION SMA−FL CASE 403AA STYLE 6 SCHOTTKY BARRIER RECTIFIER 2.0 AMPERE 100 VOLTS www.onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. MBRAF2H100T3G SMA−FL (Pb−Free) 5000 / Tape & Reel RAA = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package MARKING DIAGRAM RAA AYWW G |
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