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FDD6296 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDD6296 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDD6296/FDU6296 Rev. C(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=15A 165 mJ IAS Drain-Source Avalanche Current 15 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 29 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ± 20 V, VDS = 0 V ± 100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –0.5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 15 A, TJ=125 °C 7.5 9.0 9.3 8.8 11.3 15.0 m Ω gFS Forward Transconductance VDS = 5 V, ID = 15 A 58 S Dynamic Characteristics Ciss Input Capacitance 1440 pF Coss Output Capacitance 400 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 140 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.3 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 11 19 ns tr Turn–On Rise Time 6 11 ns td(off) Turn–Off Delay Time 29 46 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 13 23 ns Qg Total Gate Charge VDS = 15V, ID = 15 A, VGS = 10 V 22.5 31.5 nC Qg Total Gate Charge 12.2 17 nC Qgs Gate–Source Charge 4 nC Qgd Gate–Drain Charge VDS = 15V, ID = 15 A, VGS = 5 V 3.5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 3.2 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 2) 0.74 1.2 V trr Diode Reverse Recovery Time 25 nS Qrr Diode Reverse Recovery Charge IF = 15 A, diF/dt = 100 A/µs 13 nC |
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