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HA1127FP Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HA1127FP Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 7 page HA1127, HA1127P, HA1127FP 504 Absolute Maximum Ratings (Ta = 25°C) Item Symbol HA1127 Unit Collector base voltage VCBO 20 V Collector substrate voltage VCIO 20 V Collector emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Allowable collector power PC* 1 300 mW Allowable collector power PC 750* 2 mW 625* 3 Operating temperature Topr –55 to +125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. Allowable value per individual transistor. This is the allowable value up to Ta = 25°C. Derate at 3 mW/°C above that temperature. 2. Allowable value for the whole package. This is the allowable value up to Ta = 35°C for the HA1127P. Derate at 8.3 mW/°C above that temperature. 3. See page 51. |
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