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NSR20306NXT5G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NSR20306NXT5G
Description  2 A, 30 V Schottky Barrier Diode
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NSR20306NXT5G Datasheet(HTML) 2 Page - ON Semiconductor

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NSR20306NXT5G
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
245
510
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
90
1.4
°C/W
W
Storage Temperature Range
Tstg
−40 to +125
°C
Junction Temperature
TJ
+150
°C
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06
″ thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06
″ thick single sided. Operating to steady state.
0.1
Figure 1. Thermal Response (Note 1)
0.00000001
0.0001
0.001
0.01
0.1
1
10
100
1000
1
10
100
1000
PULSE TIME (sec)
SINGLE PULSE
0.01
0.02
0.05
0.2
D = 0.5
0.00001
0.1
0.01
0.000001
0.0000001
Figure 2. Thermal Response (Note 2)
0.00000001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
1
10
100
PULSE TIME (sec)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
0.00001
0.1
0.01
0.000001
0.0000001


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