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MBRD360RLG Datasheet(PDF) 2 Page - ON Semiconductor

Part # MBRD360RLG
Description  Switch-mode Power Rectifiers
Download  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBRD360RLG Datasheet(HTML) 2 Page - ON Semiconductor

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MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G
www.onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MBRD/SBRD8
Unit
320
330
340
350
360
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
50
60
V
Average Rectified Forward Current (TC = +125°C, Rated VR)
IF(AV)
3
A
Peak Repetitive Forward Current, TC = +125°C
(Rated VR, Square Wave, 20 kHz)
IFRM
6
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
75
A
Peak Repetitive Reverse Surge Current (2
ms, 1 kHz)
IRRM
1
A
Operating Junction Temperature Range (Note 1)
TJ
−65 to +175
°C
Storage Temperature Range
Tstg
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/
ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance, Junction−to−Case
RqJC
6
°C/W
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
80
°C/W
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
iF = 3 Amps, TC = +25°C
iF = 3 Amps, TC = +125°C
iF = 6 Amps, TC = +25°C
iF = 6 Amps, TC = +125°C
VF
0.6
0.45
0.7
0.625
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC = +25°C)
(Rated dc Voltage, TC = +125°C)
iR
0.2
20
mA
3. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.


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