2

Symbol

Parameter

Units

Absolute Max.

Vdd

V

4

Idd

mA

15

CW RF Input Power (Vdd = 2.7V, Idd = 3.3mA)

dBm

13

mW

60

°C

-40 to +85

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device in excess of any of these limits may cause permanent damage.

2. Assuming DC quiescent conditions.

3. Board (module belly) temperature TB is 25°C. Derate 5.4 mW/°C for Tb > 138.9°C.

5. The device will function over the recommended range without degradation in reliability or permanent change in performance, but is not

guaranteed to meet the electrical specification.

(Vdd = 2.7V, Idd = 3.3mA)

Notes:

6. Thermal resistance measured

using Infra-Red measurement

technique.