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DRV3220-Q1 Datasheet(PDF) 5 Page - Texas Instruments |
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DRV3220-Q1 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 31 page 5 DRV3220-Q1 www.ti.com SLVSDM3 – FEBRUARY 2017 Product Folder Links: DRV3220-Q1 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to network ground terminal, unless specified otherwise. (3) IVCC5 is not specifying VCC5 output current capability for external load. The allowed external load on VCC5 is specified at position 3.18 in Recommended Operating Conditions. (4) The maximum value also depends on PCB thermal design, modulation scheme, and motor operation time. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) POS MIN MAX UNIT 2.1 DC voltage VS, VSH –0.3 60 V 2.1a VS Negative voltages with minimum serial resistor 5 Ω, TA = 25°C –5 V 2.1c Negative voltages with minimum serial resistor 5 Ω, TA = 105°C –2.5 V 2.1b VSH Negative voltages with minimum serial resistor 10 Ω, TA = 25°C –5 V 2.1d Negative voltages with minimum serial resistor 10 Ω, TA = 105°C –2.5 V 2.2A Gate high-side voltage GHSx –9 70 V 2.2B Source high-side voltage SHSx –9 70 V 2.3 Gate-source high-side voltage difference GHSx- SHSx Externally driven, internal limited, see position 5.4 in Electrical Characteristics –0.3 15 V 2.4 Gate low-side voltage GLSx –9 20 V 2.5 Source low-side voltage SLSx –9 7 V 2.6 Gate-source low-side voltage difference GLSx- SLSx Externally driven, internal limited, see position 5.5 in Electrical Characteristics –0.3 15 V 2.7 Boost converter BOOST, SW –0.3 70 V 2.9 Analog input voltage VDDIO –0.3 60 V 2.9a ADREF –0.3 60 V 2.11 RVSET –0.3 60 V 2.10 Digital input voltage ILSx,IHSx, EN, DRVOFF, SCLK, NCS, SDI –0.3 60 V 2.13 Difference between GNDA and GNDLS_B GNDA, GNDLS_B –0.3 0.3 V 2.20 Maximum slew rate of SHSx pins, SRSHS –250 250 V/µs 2.21 Analog and digital output voltages ERR, SDO, RO –0.3 6 V 2.22 Unused pins (connect to GND) TEST –0.3 0.3 V 2.24 Internal supply voltage VCC5 –0.3 6 V 2.25 VCC3 –0.3 3.6 V 2.21 A Forced input and output current ERR, SDO, RO –10 10 mA 2.24 A Short-to-ground current, IVCC5 (3) Internal current limit 80 mA 2.26 Short-to-ground current, IVCC3 Limited by VCC5 80 mA 2.27 Driver FET total gate charge (per FET), Qgmax VS = 12 V, ƒPWM = 20 kHz, 6 FETs ON/OFF per PWM cycle 200(4) nC 2.28 VS = 24 V, ƒPWM = 20 kHz, 6 FETs ON/OFF per PWM cycle 100(4) nC |
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