NRVTS8120EMFST3G datasheet(3/5 Pages) ONSEMI

Part #	NRVTS8120EMFST3G

Description	Very Low Leakage Trench-based Schottky Rectifier

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Manufacturer	ONSEMI [ON Semiconductor]

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NRVTS8120EMFS

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TYPICAL CHARACTERISTICS

Figure 1. Typical Instantaneous Forward

Characteristics

Figure 2. Maximum Instantaneous Forward

Characteristics

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

1.4

1.0

0.8

0.6

0.4

0.2

0

0.1

1

10

100

Figure 3. Typical Reverse Characteristics

Figure 4. Maximum Reverse Characteristics

VR, INSTANTANEOUS REVERSE VOLTAGE (V)

80

60

50

40

30

20

10

1.E−06

Figure 5. Typical Junction Capacitance

VR, REVERSE VOLTAGE (V)

0.1

10

1000

70

90

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

10

TA = 125°C

TA = −55°C

TA = 25°C

TA = 150°C

TA = 125°C

TA = 25°C

Figure 6. Current Derating per Device

TC, CASE TEMPERATURE (°C)

140

135

155

150

125

120

0

6

12

130

145

Square Wave

DC

RqJC = 2.7°C/W

TJ = 25°C

1.2

1.6

TA = 175°C

110

100

120

1.E−07

1

4

10

2

8

16

14

TA = 150°C

TA = 175°C

160

175

100

1.8

TA = 85°C

1.4

1.0

0.8

0.6

0.4

0.2

0.1

1

10

100

TA = 125°C

TA = −55°C

TA = 25°C

1.2

1.6

TA = 175°C

TA = 150°C

TA = 85°C

VR, INSTANTANEOUS REVERSE VOLTAGE (V)

80

60

50

40

30

20

10

1.E−06

70

90

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

TA = 150°C

TA = 125°C

TA = 25°C

110

100

120

TA = 175°C

TA = 85°C

100

165 170

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